IPD90N04S404ATMA1
For Reference Only
| Part Number | IPD90N04S404ATMA1 |
| PNEDA Part # | IPD90N04S404ATMA1 |
| Description | MOSFET N-CH 40V 90A TO252-3-313 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 165,000 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPD90N04S404ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPD90N04S404ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPD90N04S404ATMA1 Datasheet
- where to find IPD90N04S404ATMA1
- Infineon Technologies
- Infineon Technologies IPD90N04S404ATMA1
- IPD90N04S404ATMA1 PDF Datasheet
- IPD90N04S404ATMA1 Stock
- IPD90N04S404ATMA1 Pinout
- Datasheet IPD90N04S404ATMA1
- IPD90N04S404ATMA1 Supplier
- Infineon Technologies Distributor
- IPD90N04S404ATMA1 Price
- IPD90N04S404ATMA1 Distributor
IPD90N04S404ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3270pF @ 25V FET Feature - Power Dissipation (Max) 347W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 5050pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSSOP Package / Case 8-TSSOP (0.173", 4.40mm Width) |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 65mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 375pF @ 15V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 6.1mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27.2nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 3365pF @ 15V FET Feature - Power Dissipation (Max) 2.3W (Ta), 41W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Power33 Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
