IPD90N06S405ATMA1
For Reference Only
| Part Number | IPD90N06S405ATMA1 |
| PNEDA Part # | IPD90N06S405ATMA1 |
| Description | MOSFET N-CH 60V 90A TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,488 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD90N06S405ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD90N06S405ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPD90N06S405ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 81nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 62mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.25W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |
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Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
