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IPDH6N03LAG

IPDH6N03LAG

For Reference Only

Part Number IPDH6N03LAG
PNEDA Part # IPDH6N03LAG
Description MOSFET N-CH 25V 50A TO252-3-11
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,002
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPDH6N03LAG Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPDH6N03LAG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPDH6N03LAG, IPDH6N03LAG Datasheet (Total Pages: 12, Size: 536.86 KB)
PDFIPUH6N03LA G Datasheet Cover
IPUH6N03LA G Datasheet Page 2 IPUH6N03LA G Datasheet Page 3 IPUH6N03LA G Datasheet Page 4 IPUH6N03LA G Datasheet Page 5 IPUH6N03LA G Datasheet Page 6 IPUH6N03LA G Datasheet Page 7 IPUH6N03LA G Datasheet Page 8 IPUH6N03LA G Datasheet Page 9 IPUH6N03LA G Datasheet Page 10 IPUH6N03LA G Datasheet Page 11

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IPDH6N03LAG Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2390pF @ 15V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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