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IPI120N06S4H1AKSA2

IPI120N06S4H1AKSA2

For Reference Only

Part Number IPI120N06S4H1AKSA2
PNEDA Part # IPI120N06S4H1AKSA2
Description MOSFET N-CH TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI120N06S4H1AKSA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI120N06S4H1AKSA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI120N06S4H1AKSA2 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds21900pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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