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IPI120P04P404AKSA1

IPI120P04P404AKSA1

For Reference Only

Part Number IPI120P04P404AKSA1
PNEDA Part # IPI120P04P404AKSA1
Description MOSFET P-CH TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,554
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI120P04P404AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI120P04P404AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI120P04P404AKSA1, IPI120P04P404AKSA1 Datasheet (Total Pages: 9, Size: 237.73 KB)
PDFIPP120P04P404AKSA1 Datasheet Cover
IPP120P04P404AKSA1 Datasheet Page 2 IPP120P04P404AKSA1 Datasheet Page 3 IPP120P04P404AKSA1 Datasheet Page 4 IPP120P04P404AKSA1 Datasheet Page 5 IPP120P04P404AKSA1 Datasheet Page 6 IPP120P04P404AKSA1 Datasheet Page 7 IPP120P04P404AKSA1 Datasheet Page 8 IPP120P04P404AKSA1 Datasheet Page 9

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IPI120P04P404AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 340µA
Gate Charge (Qg) (Max) @ Vgs205nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14790pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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