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IPI65R420CFDXKSA1

IPI65R420CFDXKSA1

For Reference Only

Part Number IPI65R420CFDXKSA1
PNEDA Part # IPI65R420CFDXKSA1
Description MOSFET N-CH 650V 8.7A TO262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,634
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI65R420CFDXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI65R420CFDXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI65R420CFDXKSA1, IPI65R420CFDXKSA1 Datasheet (Total Pages: 21, Size: 4,578.91 KB)
PDFIPB65R420CFDATMA1 Datasheet Cover
IPB65R420CFDATMA1 Datasheet Page 2 IPB65R420CFDATMA1 Datasheet Page 3 IPB65R420CFDATMA1 Datasheet Page 4 IPB65R420CFDATMA1 Datasheet Page 5 IPB65R420CFDATMA1 Datasheet Page 6 IPB65R420CFDATMA1 Datasheet Page 7 IPB65R420CFDATMA1 Datasheet Page 8 IPB65R420CFDATMA1 Datasheet Page 9 IPB65R420CFDATMA1 Datasheet Page 10 IPB65R420CFDATMA1 Datasheet Page 11

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IPI65R420CFDXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 100V
FET Feature-
Power Dissipation (Max)83.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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