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IPP050N06N G

IPP050N06N G

For Reference Only

Part Number IPP050N06N G
PNEDA Part # IPP050N06N-G
Description MOSFET N-CH 60V 100A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,994
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP050N06N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP050N06N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP050N06N G, IPP050N06N G Datasheet (Total Pages: 10, Size: 376.16 KB)
PDFIPB050N06NGATMA1 Datasheet Cover
IPB050N06NGATMA1 Datasheet Page 2 IPB050N06NGATMA1 Datasheet Page 3 IPB050N06NGATMA1 Datasheet Page 4 IPB050N06NGATMA1 Datasheet Page 5 IPB050N06NGATMA1 Datasheet Page 6 IPB050N06NGATMA1 Datasheet Page 7 IPB050N06NGATMA1 Datasheet Page 8 IPB050N06NGATMA1 Datasheet Page 9 IPB050N06NGATMA1 Datasheet Page 10

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IPP050N06N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs167nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6100pF @ 30V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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