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IPP120N04S401AKSA1

IPP120N04S401AKSA1

For Reference Only

Part Number IPP120N04S401AKSA1
PNEDA Part # IPP120N04S401AKSA1
Description MOSFET N-CH 40V 120A TO220-3-1
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,946
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP120N04S401AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP120N04S401AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP120N04S401AKSA1, IPP120N04S401AKSA1 Datasheet (Total Pages: 9, Size: 159.05 KB)
PDFIPI120N04S4-01M Datasheet Cover
IPI120N04S4-01M Datasheet Page 2 IPI120N04S4-01M Datasheet Page 3 IPI120N04S4-01M Datasheet Page 4 IPI120N04S4-01M Datasheet Page 5 IPI120N04S4-01M Datasheet Page 6 IPI120N04S4-01M Datasheet Page 7 IPI120N04S4-01M Datasheet Page 8 IPI120N04S4-01M Datasheet Page 9

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IPP120N04S401AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs176nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14000pF @ 25V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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