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IPP230N06L3 G

IPP230N06L3 G

For Reference Only

Part Number IPP230N06L3 G
PNEDA Part # IPP230N06L3-G
Description MOSFET N-CH 60V 30A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP230N06L3 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP230N06L3 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP230N06L3 G, IPP230N06L3 G Datasheet (Total Pages: 10, Size: 400.26 KB)
PDFIPB230N06L3GATMA1 Datasheet Cover
IPB230N06L3GATMA1 Datasheet Page 2 IPB230N06L3GATMA1 Datasheet Page 3 IPB230N06L3GATMA1 Datasheet Page 4 IPB230N06L3GATMA1 Datasheet Page 5 IPB230N06L3GATMA1 Datasheet Page 6 IPB230N06L3GATMA1 Datasheet Page 7 IPB230N06L3GATMA1 Datasheet Page 8 IPB230N06L3GATMA1 Datasheet Page 9 IPB230N06L3GATMA1 Datasheet Page 10

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IPP230N06L3 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 30V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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