IPP45N06S4L08AKSA1
For Reference Only
| Part Number | IPP45N06S4L08AKSA1 |
| PNEDA Part # | IPP45N06S4L08AKSA1 |
| Description | MOSFET N-CH 60V 45A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,420 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP45N06S4L08AKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP45N06S4L08AKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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IPP45N06S4L08AKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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Manufacturer IXYS Series GigaMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 170V Current - Continuous Drain (Id) @ 25°C 320A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.2mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 640nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 45000pF @ 25V FET Feature - Power Dissipation (Max) 1670W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1500V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13Ohm @ 1A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 30V FET Feature - Power Dissipation (Max) 2.5W (Ta), 110W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P-3L Package / Case TO-3P-3, SC-65-3 |
