IPS118N10N G
For Reference Only
| Part Number | IPS118N10N G |
| PNEDA Part # | IPS118N10N-G |
| Description | MOSFET N-CH 100V 75A TO251-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,284 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPS118N10N G Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPS118N10N G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IPS118N10N G Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11.8mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4320pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Stub Leads, IPak |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 182mOhm @ 12.5A, 15V Vgs(th) (Max) @ Id 7V @ 4.5mA Gate Charge (Qg) (Max) @ Vgs 57nC @ 15V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 100V FET Feature - Power Dissipation (Max) 306W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247G Package / Case TO-247-3 |
Manufacturer ON Semiconductor Series QFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 530mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 44W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
