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IPS118N10N G

IPS118N10N G

For Reference Only

Part Number IPS118N10N G
PNEDA Part # IPS118N10N-G
Description MOSFET N-CH 100V 75A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS118N10N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS118N10N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS118N10N G, IPS118N10N G Datasheet (Total Pages: 9, Size: 570.37 KB)
PDFIPS118N10N G Datasheet Cover
IPS118N10N G Datasheet Page 2 IPS118N10N G Datasheet Page 3 IPS118N10N G Datasheet Page 4 IPS118N10N G Datasheet Page 5 IPS118N10N G Datasheet Page 6 IPS118N10N G Datasheet Page 7 IPS118N10N G Datasheet Page 8 IPS118N10N G Datasheet Page 9

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IPS118N10N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4320pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

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