R6025JNZ4C13
For Reference Only
| Part Number | R6025JNZ4C13 |
| PNEDA Part # | R6025JNZ4C13 |
| Description | R6025JNZ4 IS A POWER MOSFET WITH |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,084 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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R6025JNZ4C13 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | R6025JNZ4C13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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R6025JNZ4C13 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 12.5A, 15V |
| Vgs(th) (Max) @ Id | 7V @ 4.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 15V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247G |
| Package / Case | TO-247-3 |
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 70.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4426pF @ 30V FET Feature - Power Dissipation (Max) 211W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 526pF @ 100V FET Feature - Power Dissipation (Max) 147W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
