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SIHB10N40D-GE3

SIHB10N40D-GE3

For Reference Only

Part Number SIHB10N40D-GE3
PNEDA Part # SIHB10N40D-GE3
Description MOSFET N-CH 400V 10A DPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 19,140
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHB10N40D-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHB10N40D-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHB10N40D-GE3, SIHB10N40D-GE3 Datasheet (Total Pages: 7, Size: 152.11 KB)
PDFSIHB10N40D-GE3 Datasheet Cover
SIHB10N40D-GE3 Datasheet Page 2 SIHB10N40D-GE3 Datasheet Page 3 SIHB10N40D-GE3 Datasheet Page 4 SIHB10N40D-GE3 Datasheet Page 5 SIHB10N40D-GE3 Datasheet Page 6 SIHB10N40D-GE3 Datasheet Page 7

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SIHB10N40D-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds526pF @ 100V
FET Feature-
Power Dissipation (Max)147W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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