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IPU060N03L G

IPU060N03L G

For Reference Only

Part Number IPU060N03L G
PNEDA Part # IPU060N03L-G
Description MOSFET N-CH 30V 50A TO-251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 23 - Jun 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU060N03L G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU060N03L G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPU060N03L G, IPU060N03L G Datasheet (Total Pages: 12, Size: 1,021.05 KB)
PDFIPU060N03L G Datasheet Cover
IPU060N03L G Datasheet Page 2 IPU060N03L G Datasheet Page 3 IPU060N03L G Datasheet Page 4 IPU060N03L G Datasheet Page 5 IPU060N03L G Datasheet Page 6 IPU060N03L G Datasheet Page 7 IPU060N03L G Datasheet Page 8 IPU060N03L G Datasheet Page 9 IPU060N03L G Datasheet Page 10 IPU060N03L G Datasheet Page 11

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IPU060N03L G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 15V
FET Feature-
Power Dissipation (Max)56W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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