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IPU09N03LA G

IPU09N03LA G

For Reference Only

Part Number IPU09N03LA G
PNEDA Part # IPU09N03LA-G
Description MOSFET N-CH 25V 50A TO-251
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,610
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPU09N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPU09N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPU09N03LA G, IPU09N03LA G Datasheet (Total Pages: 12, Size: 531.57 KB)
PDFIPS09N03LA G Datasheet Cover
IPS09N03LA G Datasheet Page 2 IPS09N03LA G Datasheet Page 3 IPS09N03LA G Datasheet Page 4 IPS09N03LA G Datasheet Page 5 IPS09N03LA G Datasheet Page 6 IPS09N03LA G Datasheet Page 7 IPS09N03LA G Datasheet Page 8 IPS09N03LA G Datasheet Page 9 IPS09N03LA G Datasheet Page 10 IPS09N03LA G Datasheet Page 11

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IPU09N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1642pF @ 15V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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