IPW65R190CFDFKSA2
For Reference Only
| Part Number | IPW65R190CFDFKSA2 |
| PNEDA Part # | IPW65R190CFDFKSA2 |
| Description | HIGH POWER_LEGACY |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,924 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPW65R190CFDFKSA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPW65R190CFDFKSA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPW65R190CFDFKSA2 Datasheet
- where to find IPW65R190CFDFKSA2
- Infineon Technologies
- Infineon Technologies IPW65R190CFDFKSA2
- IPW65R190CFDFKSA2 PDF Datasheet
- IPW65R190CFDFKSA2 Stock
- IPW65R190CFDFKSA2 Pinout
- Datasheet IPW65R190CFDFKSA2
- IPW65R190CFDFKSA2 Supplier
- Infineon Technologies Distributor
- IPW65R190CFDFKSA2 Price
- IPW65R190CFDFKSA2 Distributor
IPW65R190CFDFKSA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CFD2 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 18A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 85mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V FET Feature - Power Dissipation (Max) 462W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.4mOhm @ 16A, 10V Vgs(th) (Max) @ Id 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3620pF @ 15V FET Feature - Power Dissipation (Max) 1.56W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-DSO-8 Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 53A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 26.5A, 10V Vgs(th) (Max) @ Id 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3034pF @ 100V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
