IRF2807ZSTRRPBF
For Reference Only
| Part Number | IRF2807ZSTRRPBF |
| PNEDA Part # | IRF2807ZSTRRPBF |
| Description | MOSFET N-CH 75V 75A D2PAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,192 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IRF2807ZSTRRPBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IRF2807ZSTRRPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRF2807ZSTRRPBF Datasheet
- where to find IRF2807ZSTRRPBF
- Infineon Technologies
- Infineon Technologies IRF2807ZSTRRPBF
- IRF2807ZSTRRPBF PDF Datasheet
- IRF2807ZSTRRPBF Stock
- IRF2807ZSTRRPBF Pinout
- Datasheet IRF2807ZSTRRPBF
- IRF2807ZSTRRPBF Supplier
- Infineon Technologies Distributor
- IRF2807ZSTRRPBF Price
- IRF2807ZSTRRPBF Distributor
IRF2807ZSTRRPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 53A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 14A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 4234pF @ 20V FET Feature - Power Dissipation (Max) 1.7W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-4L Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 375A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 38mOhm @ 21A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6714pF @ 25V FET Feature - Power Dissipation (Max) 4.3W (Ta), 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET L8 Package / Case DirectFET™ Isometric L8 |
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2.6A (Tj) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 90mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8050pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D2Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 0V, 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 160mA, 10V Vgs(th) (Max) @ Id 2.4V @ 26µA Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 44pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
