Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF3704STRR

IRF3704STRR

For Reference Only

Part Number IRF3704STRR
PNEDA Part # IRF3704STRR
Description MOSFET N-CH 20V 77A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,654
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3704STRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3704STRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3704STRR, IRF3704STRR Datasheet (Total Pages: 11, Size: 128.94 KB)
PDFIRF3704STRR Datasheet Cover
IRF3704STRR Datasheet Page 2 IRF3704STRR Datasheet Page 3 IRF3704STRR Datasheet Page 4 IRF3704STRR Datasheet Page 5 IRF3704STRR Datasheet Page 6 IRF3704STRR Datasheet Page 7 IRF3704STRR Datasheet Page 8 IRF3704STRR Datasheet Page 9 IRF3704STRR Datasheet Page 10 IRF3704STRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF3704STRR Datasheet
  • where to find IRF3704STRR
  • Infineon Technologies

  • Infineon Technologies IRF3704STRR
  • IRF3704STRR PDF Datasheet
  • IRF3704STRR Stock

  • IRF3704STRR Pinout
  • Datasheet IRF3704STRR
  • IRF3704STRR Supplier

  • Infineon Technologies Distributor
  • IRF3704STRR Price
  • IRF3704STRR Distributor

IRF3704STRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1996pF @ 10V
FET Feature-
Power Dissipation (Max)87W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

NTD4865N-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

827pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.27W (Ta), 33.3W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

STY80NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

74A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

35mOhm @ 37A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

360nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

10100pF @ 50V

FET Feature

-

Power Dissipation (Max)

447W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

MAX247™

Package / Case

TO-247-3

TK14N65W5,S1F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

13.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 6.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 690µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 300V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

SQ2315ES-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

50mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 4V

FET Feature

-

Power Dissipation (Max)

2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SPU11N10

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id

4V @ 21µA

Gate Charge (Qg) (Max) @ Vgs

18.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

P-TO251-3-1

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

BZV55C5V1

BZV55C5V1

Microsemi

DIODE ZENER 5.1V DO213AA

CDRH127NP-100MC

CDRH127NP-100MC

Sumida

FIXED IND 10UH 5.4A 21.6 MOHM

ADV7123SCP170EP-RL

ADV7123SCP170EP-RL

Analog Devices

IC DAC 10BIT A-OUT 48LQFP

2N3390

2N3390

ON Semiconductor

TRANS NPN 25V 0.5A TO-92

AD5293BRUZ-20

AD5293BRUZ-20

Analog Devices

IC DGT POT 20KOHM 1024TP 14TSSOP

MT28GU01GAAA1EGC-0SIT

MT28GU01GAAA1EGC-0SIT

Micron Technology Inc.

IC FLASH 1G PARALLEL 64TBGA

ASPIAIG-F7030-4R7M-T

ASPIAIG-F7030-4R7M-T

Abracon

FIXED IND 4.7UH 9A 26.7MOHM

DF10M

DF10M

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DFM

FM24W256-GTR

FM24W256-GTR

Cypress Semiconductor

IC FRAM 256K I2C 1MHZ 8SOIC

AQY210S

AQY210S

Panasonic Electric Works

SSR RELAY SPST-NO 120MA 0-350V

R5F1076CGSP#X0

R5F1076CGSP#X0

Renesas Electronics America

IC MCU 16BIT 32KB FLASH 20LSSOP

APE30024

APE30024

Panasonic Electric Works

RELAY GEN PURPOSE SPDT 6A 24V