IRF3709ZL
For Reference Only
| Part Number | IRF3709ZL |
| PNEDA Part # | IRF3709ZL |
| Description | MOSFET N-CH 30V 87A TO-262 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,616 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 23 - Jun 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IRF3709ZL Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IRF3709ZL |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRF3709ZL Datasheet
- where to find IRF3709ZL
- Infineon Technologies
- Infineon Technologies IRF3709ZL
- IRF3709ZL PDF Datasheet
- IRF3709ZL Stock
- IRF3709ZL Pinout
- Datasheet IRF3709ZL
- IRF3709ZL Supplier
- Infineon Technologies Distributor
- IRF3709ZL Price
- IRF3709ZL Distributor
IRF3709ZL Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 21A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 20A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5mOhm @ 70A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 338nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 25V FET Feature - Power Dissipation (Max) 181W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-5 Package / Case TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Microchip Technology Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 310mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V FET Feature - Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.8V @ 146µA Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8200pF @ 50V FET Feature - Power Dissipation (Max) 3W (Ta), 214W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSON-8-3 Package / Case 8-PowerTDFN |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250mOhm @ 7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 50V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
