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IRF530NS

IRF530NS

For Reference Only

Part Number IRF530NS
PNEDA Part # IRF530NS
Description MOSFET N-CH 100V 17A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,194
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF530NS Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF530NS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF530NS, IRF530NS Datasheet (Total Pages: 11, Size: 613.33 KB)
PDFIRF530NL Datasheet Cover
IRF530NL Datasheet Page 2 IRF530NL Datasheet Page 3 IRF530NL Datasheet Page 4 IRF530NL Datasheet Page 5 IRF530NL Datasheet Page 6 IRF530NL Datasheet Page 7 IRF530NL Datasheet Page 8 IRF530NL Datasheet Page 9 IRF530NL Datasheet Page 10 IRF530NL Datasheet Page 11

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IRF530NS Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 70W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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