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IRF5802TR

IRF5802TR

For Reference Only

Part Number IRF5802TR
PNEDA Part # IRF5802TR
Description MOSFET N-CH 150V 0.9A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,556
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5802TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5802TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF5802TR, IRF5802TR Datasheet (Total Pages: 8, Size: 127.59 KB)
PDFIRF5802TR Datasheet Cover
IRF5802TR Datasheet Page 2 IRF5802TR Datasheet Page 3 IRF5802TR Datasheet Page 4 IRF5802TR Datasheet Page 5 IRF5802TR Datasheet Page 6 IRF5802TR Datasheet Page 7 IRF5802TR Datasheet Page 8

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IRF5802TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds88pF @ 25V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6 Thin, TSOT-23-6

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