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IRF630BTSTU_FP001

IRF630BTSTU_FP001

For Reference Only

Part Number IRF630BTSTU_FP001
PNEDA Part # IRF630BTSTU_FP001
Description MOSFET N-CH 200V 9A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,356
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF630BTSTU_FP001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberIRF630BTSTU_FP001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF630BTSTU_FP001, IRF630BTSTU_FP001 Datasheet (Total Pages: 10, Size: 859.82 KB)
PDFIRF630BTSTU_FP001 Datasheet Cover
IRF630BTSTU_FP001 Datasheet Page 2 IRF630BTSTU_FP001 Datasheet Page 3 IRF630BTSTU_FP001 Datasheet Page 4 IRF630BTSTU_FP001 Datasheet Page 5 IRF630BTSTU_FP001 Datasheet Page 6 IRF630BTSTU_FP001 Datasheet Page 7 IRF630BTSTU_FP001 Datasheet Page 8 IRF630BTSTU_FP001 Datasheet Page 9 IRF630BTSTU_FP001 Datasheet Page 10

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IRF630BTSTU_FP001 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds720pF @ 25V
FET Feature-
Power Dissipation (Max)72W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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