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IRF6633ATR1PBF

IRF6633ATR1PBF

For Reference Only

Part Number IRF6633ATR1PBF
PNEDA Part # IRF6633ATR1PBF
Description MOSFET N-CH 20V 16A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,942
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6633ATR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6633ATR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6633ATR1PBF, IRF6633ATR1PBF Datasheet (Total Pages: 9, Size: 263.22 KB)
PDFIRF6633ATRPBF Datasheet Cover
IRF6633ATRPBF Datasheet Page 2 IRF6633ATRPBF Datasheet Page 3 IRF6633ATRPBF Datasheet Page 4 IRF6633ATRPBF Datasheet Page 5 IRF6633ATRPBF Datasheet Page 6 IRF6633ATRPBF Datasheet Page 7 IRF6633ATRPBF Datasheet Page 8 IRF6633ATRPBF Datasheet Page 9

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IRF6633ATR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C16A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1410pF @ 10V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MU
Package / CaseDirectFET™ Isometric MU

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