IRF6712STRPBF
For Reference Only
| Part Number | IRF6712STRPBF |
| PNEDA Part # | IRF6712STRPBF |
| Description | MOSFET N-CH 25V 17A DIRECTFET |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,406 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRF6712STRPBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRF6712STRPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IRF6712STRPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 68A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 13V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 36W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ SQ |
| Package / Case | DirectFET™ Isometric SQ |
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 175pF @ 25V FET Feature - Power Dissipation (Max) 8.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11340pF @ 25V FET Feature - Power Dissipation (Max) 349W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
