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IRF6729MTRPBF

IRF6729MTRPBF

For Reference Only

Part Number IRF6729MTRPBF
PNEDA Part # IRF6729MTRPBF
Description MOSFET N-CH 30V 31A DIRECTFET
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,106
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6729MTRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6729MTRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF6729MTRPBF, IRF6729MTRPBF Datasheet (Total Pages: 9, Size: 244.61 KB)
PDFIRF6729MTRPBF Datasheet Cover
IRF6729MTRPBF Datasheet Page 2 IRF6729MTRPBF Datasheet Page 3 IRF6729MTRPBF Datasheet Page 4 IRF6729MTRPBF Datasheet Page 5 IRF6729MTRPBF Datasheet Page 6 IRF6729MTRPBF Datasheet Page 7 IRF6729MTRPBF Datasheet Page 8 IRF6729MTRPBF Datasheet Page 9

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IRF6729MTRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C31A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.8mOhm @ 31A, 10V
Vgs(th) (Max) @ Id2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6030pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 104W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ MX
Package / CaseDirectFET™ Isometric MX

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