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IRF7464TR

IRF7464TR

For Reference Only

Part Number IRF7464TR
PNEDA Part # IRF7464TR
Description MOSFET N-CH 200V 1.2A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,282
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7464TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7464TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7464TR, IRF7464TR Datasheet (Total Pages: 8, Size: 109.1 KB)
PDFIRF7464TR Datasheet Cover
IRF7464TR Datasheet Page 2 IRF7464TR Datasheet Page 3 IRF7464TR Datasheet Page 4 IRF7464TR Datasheet Page 5 IRF7464TR Datasheet Page 6 IRF7464TR Datasheet Page 7 IRF7464TR Datasheet Page 8

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IRF7464TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs730mOhm @ 720mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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