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IRF7606TR

IRF7606TR

For Reference Only

Part Number IRF7606TR
PNEDA Part # IRF7606TR
Description MOSFET P-CH 30V 3.6A MICRO8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7606TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7606TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7606TR, IRF7606TR Datasheet (Total Pages: 8, Size: 128.4 KB)
PDFIRF7606TR Datasheet Cover
IRF7606TR Datasheet Page 2 IRF7606TR Datasheet Page 3 IRF7606TR Datasheet Page 4 IRF7606TR Datasheet Page 5 IRF7606TR Datasheet Page 6 IRF7606TR Datasheet Page 7 IRF7606TR Datasheet Page 8

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IRF7606TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs90mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro8™
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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