Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7807APBF

IRF7807APBF

For Reference Only

Part Number IRF7807APBF
PNEDA Part # IRF7807APBF
Description MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7807APBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7807APBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7807APBF Datasheet
  • where to find IRF7807APBF
  • Infineon Technologies

  • Infineon Technologies IRF7807APBF
  • IRF7807APBF PDF Datasheet
  • IRF7807APBF Stock

  • IRF7807APBF Pinout
  • Datasheet IRF7807APBF
  • IRF7807APBF Supplier

  • Infineon Technologies Distributor
  • IRF7807APBF Price
  • IRF7807APBF Distributor

IRF7807APBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs25mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

IRFS11N50ATRLP

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

520mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1423pF @ 25V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDP52N20

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

49mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

NTMFS4835NT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 11.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 12V

FET Feature

-

Power Dissipation (Max)

890mW (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

FDP5N50NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2.25A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 25V

FET Feature

-

Power Dissipation (Max)

78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

DMT10H014LSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1871pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

AD8113JSTZ

AD8113JSTZ

Analog Devices

IC VIDEO CROSSPOINT SWIT 100LQFP

SII1161CTU

SII1161CTU

Lattice Semiconductor Corporation

UXGA PANELLINK RECEIVER

STM32L452RET6

STM32L452RET6

STMicroelectronics

IC MCU 32BIT 512KB FLASH 64LQFP

APHHS1005CGCK

APHHS1005CGCK

Kingbright

LED GREEN CLEAR CHIP SMD

MOCD217M

MOCD217M

ON Semiconductor

OPTOISO 2.5KV 2CH TRANS 8SOIC

SR1LARU

SR1LARU

STMicroelectronics

IC SMART RESET 4PIN 6.0S 6UDFN

BLM41PG102SN1L

BLM41PG102SN1L

Murata

FERRITE BEAD 1 KOHM 1806 1LN

BSS84-7-F

BSS84-7-F

Diodes Incorporated

MOSFET P-CH 50V 130MA SOT23-3

CB3LV-3I-30M0000

CB3LV-3I-30M0000

CTS Frequency Controls

XTAL OSC XO 30.0000MHZ HCMOS TTL

T495D337K006ATE040

T495D337K006ATE040

KEMET

CAP TANT 330UF 10% 6.3V 2917

4608X-102-471LF

4608X-102-471LF

Bourns

RES ARRAY 4 RES 470 OHM 8SIP

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917