Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF7832PBF

IRF7832PBF

For Reference Only

Part Number IRF7832PBF
PNEDA Part # IRF7832PBF
Description MOSFET N-CH 30V 20A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,852
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7832PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7832PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF7832PBF Datasheet
  • where to find IRF7832PBF
  • Infineon Technologies

  • Infineon Technologies IRF7832PBF
  • IRF7832PBF PDF Datasheet
  • IRF7832PBF Stock

  • IRF7832PBF Pinout
  • Datasheet IRF7832PBF
  • IRF7832PBF Supplier

  • Infineon Technologies Distributor
  • IRF7832PBF Price
  • IRF7832PBF Distributor

IRF7832PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.32V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4310pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 155°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

RZR020P01TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

105mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 6V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT3

Package / Case

SC-96

DMT3009LFVWQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3.8V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 14.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

823pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 35.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

PowerDI3333-8 (SWP) Type UX

Package / Case

8-PowerVDFN

IPD110N12N3GBUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4310pF @ 60V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SUM09N20-270-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

270mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

580pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUK9637-100E,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

36mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

22.8nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

2681pF @ 25V

FET Feature

-

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

EPC2032

EPC2032

EPC

GANFET TRANS 100V 48A BUMPED DIE

MCP2551-I/SN

MCP2551-I/SN

Microchip Technology

IC TRANSCEIVER HALF 1/1 8SOIC

M74HC42B1R

M74HC42B1R

STMicroelectronics

IC DECODER BCD TO DECIMAL 16-DIP

PZTA92

PZTA92

ON Semiconductor

TRANS PNP 300V 0.5A SOT-223

LTC4364HS-2#PBF

LTC4364HS-2#PBF

Linear Technology/Analog Devices

IC SURGE STOPPER W/DIODE SMD

20IMX35D12D12-8G

20IMX35D12D12-8G

Bel Power Solutions

DC DC CONVERTER 12V 12V 12V 35W

74438356150

74438356150

Wurth Electronics

FIXED IND 15UH 1.9A 230MOHM SMD

ATMEGA162-16PU

ATMEGA162-16PU

Microchip Technology

IC MCU 8BIT 16KB FLASH 40DIP

LTC4416IMS-1#PBF

LTC4416IMS-1#PBF

Linear Technology/Analog Devices

IC OR CTRLR SRC SELECT 10MSOP

SI9706DY-T1-E3

SI9706DY-T1-E3

Vishay Siliconix

IC PCMCIA INTFACE SW 8SO

MUR1100ERLG

MUR1100ERLG

ON Semiconductor

DIODE GEN PURP 1KV 1A AXIAL

MMBT3904-7-F

MMBT3904-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3