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IRF8113TR

IRF8113TR

For Reference Only

Part Number IRF8113TR
PNEDA Part # IRF8113TR
Description MOSFET N-CH 30V 17.2A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,110
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF8113TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF8113TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF8113TR, IRF8113TR Datasheet (Total Pages: 10, Size: 266.62 KB)
PDFIRF8113 Datasheet Cover
IRF8113 Datasheet Page 2 IRF8113 Datasheet Page 3 IRF8113 Datasheet Page 4 IRF8113 Datasheet Page 5 IRF8113 Datasheet Page 6 IRF8113 Datasheet Page 7 IRF8113 Datasheet Page 8 IRF8113 Datasheet Page 9 IRF8113 Datasheet Page 10

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IRF8113TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 17.2A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2910pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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