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IRF830

IRF830

For Reference Only

Part Number IRF830
PNEDA Part # IRF830
Description MOSFET N-CH 500V 4.5A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,084
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF830 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberIRF830
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF830, IRF830 Datasheet (Total Pages: 8, Size: 281.21 KB)
PDFIRF830 Datasheet Cover
IRF830 Datasheet Page 2 IRF830 Datasheet Page 3 IRF830 Datasheet Page 4 IRF830 Datasheet Page 5 IRF830 Datasheet Page 6 IRF830 Datasheet Page 7 IRF830 Datasheet Page 8

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IRF830 Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds610pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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