IRF9910
For Reference Only
| Part Number | IRF9910 |
| PNEDA Part # | IRF9910 |
| Description | MOSFET 2N-CH 20V 10A 8-SOIC |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,762 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 22 - Apr 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRF9910 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRF9910 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IRF9910 Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 12A |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N and P-Channel Complementary FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A (Tc), 12A (Tc) Rds On (Max) @ Id, Vgs 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.6V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V, 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 395pF @ 15V, 730pF @ 15V Power - Max 19W (Tc), 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package TO-252-4L |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.7A Rds On (Max) @ Id, Vgs 15.5mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
