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IRFB3307

IRFB3307

For Reference Only

Part Number IRFB3307
PNEDA Part # IRFB3307
Description MOSFET N-CH 75V 130A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFB3307 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFB3307
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFB3307, IRFB3307 Datasheet (Total Pages: 12, Size: 356.88 KB)
PDFIRFSL3307 Datasheet Cover
IRFSL3307 Datasheet Page 2 IRFSL3307 Datasheet Page 3 IRFSL3307 Datasheet Page 4 IRFSL3307 Datasheet Page 5 IRFSL3307 Datasheet Page 6 IRFSL3307 Datasheet Page 7 IRFSL3307 Datasheet Page 8 IRFSL3307 Datasheet Page 9 IRFSL3307 Datasheet Page 10 IRFSL3307 Datasheet Page 11

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IRFB3307 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5150pF @ 50V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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