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IRFB33N15D

IRFB33N15D

For Reference Only

Part Number IRFB33N15D
PNEDA Part # IRFB33N15D
Description MOSFET N-CH 150V 33A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFB33N15D Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFB33N15D
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFB33N15D, IRFB33N15D Datasheet (Total Pages: 12, Size: 144.92 KB)
PDFIRFSL33N15D Datasheet Cover
IRFSL33N15D Datasheet Page 2 IRFSL33N15D Datasheet Page 3 IRFSL33N15D Datasheet Page 4 IRFSL33N15D Datasheet Page 5 IRFSL33N15D Datasheet Page 6 IRFSL33N15D Datasheet Page 7 IRFSL33N15D Datasheet Page 8 IRFSL33N15D Datasheet Page 9 IRFSL33N15D Datasheet Page 10 IRFSL33N15D Datasheet Page 11

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IRFB33N15D Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs56mOhm @ 20A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2020pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 170W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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