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IRFD110PBF

IRFD110PBF

For Reference Only

Part Number IRFD110PBF
PNEDA Part # IRFD110PBF
Description MOSFET N-CH 100V 1A 4-DIP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 80,634
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFD110PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFD110PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFD110PBF, IRFD110PBF Datasheet (Total Pages: 9, Size: 150.98 KB)
PDFIRFD110 Datasheet Cover
IRFD110 Datasheet Page 2 IRFD110 Datasheet Page 3 IRFD110 Datasheet Page 4 IRFD110 Datasheet Page 5 IRFD110 Datasheet Page 6 IRFD110 Datasheet Page 7 IRFD110 Datasheet Page 8 IRFD110 Datasheet Page 9

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IRFD110PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs540mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 25V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-DIP, Hexdip, HVMDIP
Package / Case4-DIP (0.300", 7.62mm)

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