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IRFH8334TR2PBF

IRFH8334TR2PBF

For Reference Only

Part Number IRFH8334TR2PBF
PNEDA Part # IRFH8334TR2PBF
Description MOSFET N-CH 30V 12A 5X6 PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,138
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH8334TR2PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH8334TR2PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRFH8334TR2PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1180pF @ 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (5x6)
Package / Case8-PowerTDFN

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