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IRFHE4250DTRPBF

IRFHE4250DTRPBF

For Reference Only

Part Number IRFHE4250DTRPBF
PNEDA Part # IRFHE4250DTRPBF
Description MOSFET 2N-CH 25V 86A/303A PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,910
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFHE4250DTRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFHE4250DTRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRFHE4250DTRPBF, IRFHE4250DTRPBF Datasheet (Total Pages: 12, Size: 377.09 KB)
PDFIRFHE4250DTRPBF Datasheet Cover
IRFHE4250DTRPBF Datasheet Page 2 IRFHE4250DTRPBF Datasheet Page 3 IRFHE4250DTRPBF Datasheet Page 4 IRFHE4250DTRPBF Datasheet Page 5 IRFHE4250DTRPBF Datasheet Page 6 IRFHE4250DTRPBF Datasheet Page 7 IRFHE4250DTRPBF Datasheet Page 8 IRFHE4250DTRPBF Datasheet Page 9 IRFHE4250DTRPBF Datasheet Page 10 IRFHE4250DTRPBF Datasheet Page 11

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IRFHE4250DTRPBF Specifications

ManufacturerInfineon Technologies
SeriesFASTIRFET™
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C86A, 303A
Rds On (Max) @ Id, Vgs2.75mOhm @ 27A, 10V
Vgs(th) (Max) @ Id2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1735pF @ 13V
Power - Max156W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case32-PowerWFQFN
Supplier Device Package32-PQFN (6x6)

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