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IRFN214BTA_FP001

IRFN214BTA_FP001

For Reference Only

Part Number IRFN214BTA_FP001
PNEDA Part # IRFN214BTA_FP001
Description MOSFET N-CH 250V 0.6A TO-92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFN214BTA_FP001 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberIRFN214BTA_FP001
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFN214BTA_FP001, IRFN214BTA_FP001 Datasheet (Total Pages: 8, Size: 607.28 KB)
PDFIRFN214BTA_FP001 Datasheet Cover
IRFN214BTA_FP001 Datasheet Page 2 IRFN214BTA_FP001 Datasheet Page 3 IRFN214BTA_FP001 Datasheet Page 4 IRFN214BTA_FP001 Datasheet Page 5 IRFN214BTA_FP001 Datasheet Page 6 IRFN214BTA_FP001 Datasheet Page 7 IRFN214BTA_FP001 Datasheet Page 8

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IRFN214BTA_FP001 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds275pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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