Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFP7530PBF

IRFP7530PBF

For Reference Only

Part Number IRFP7530PBF
PNEDA Part # IRFP7530PBF
Description MOSFET N CH 60V 195A TO247
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFP7530PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFP7530PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFP7530PBF Datasheet
  • where to find IRFP7530PBF
  • Infineon Technologies

  • Infineon Technologies IRFP7530PBF
  • IRFP7530PBF PDF Datasheet
  • IRFP7530PBF Stock

  • IRFP7530PBF Pinout
  • Datasheet IRFP7530PBF
  • IRFP7530PBF Supplier

  • Infineon Technologies Distributor
  • IRFP7530PBF Price
  • IRFP7530PBF Distributor

IRFP7530PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®, StrongIRFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs411nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13703pF @ 25V
FET Feature-
Power Dissipation (Max)341W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

The Products You May Be Interested In

RFG60P05E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

30mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

450nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7200pF @ 25V

FET Feature

-

Power Dissipation (Max)

215W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

DMT4001LPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SIR462DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1155pF @ 15V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 41.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IPB080N06N G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3500pF @ 30V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMTH6010LK3Q-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

14.8A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2090pF @ 30V

FET Feature

-

Power Dissipation (Max)

31W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

LTC1625CS#PBF

LTC1625CS#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK/BOOST 16SOIC

BLM41PG102SN1L

BLM41PG102SN1L

Murata

FERRITE BEAD 1 KOHM 1806 1LN

STPS1H100A

STPS1H100A

STMicroelectronics

DIODE SCHOTTKY 100V 1A SMA

LTST-C150TBKT

LTST-C150TBKT

Lite-On Inc.

LED BLUE CLEAR 1206 SMD

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

KSZ9031RNXIA

KSZ9031RNXIA

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

FMMT625TA

FMMT625TA

Diodes Incorporated

TRANS NPN 150V 1A SOT23-3

LTST-C190KRKT

LTST-C190KRKT

Lite-On Inc.

LED RED CLEAR CHIP SMD

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23

17-21SURC/S530-A3/TR8

17-21SURC/S530-A3/TR8

Everlight Electronics Co Ltd

LED RED CLEAR SMD

MBT3906DW1T1G

MBT3906DW1T1G

ON Semiconductor

TRANS 2PNP 40V 0.2A SC88

ADM2483BRWZ

ADM2483BRWZ

Analog Devices

DGTL ISO RS422/RS485 16SOIC