Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR3103TR

IRFR3103TR

For Reference Only

Part Number IRFR3103TR
PNEDA Part # IRFR3103TR
Description MOSFET N-CH 400V 1.7A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,444
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR3103TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR3103TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR3103TR, IRFR3103TR Datasheet (Total Pages: 6, Size: 173.79 KB)
PDFIRFR3103TRR Datasheet Cover
IRFR3103TRR Datasheet Page 2 IRFR3103TRR Datasheet Page 3 IRFR3103TRR Datasheet Page 4 IRFR3103TRR Datasheet Page 5 IRFR3103TRR Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR3103TR Datasheet
  • where to find IRFR3103TR
  • Infineon Technologies

  • Infineon Technologies IRFR3103TR
  • IRFR3103TR PDF Datasheet
  • IRFR3103TR Stock

  • IRFR3103TR Pinout
  • Datasheet IRFR3103TR
  • IRFR3103TR Supplier

  • Infineon Technologies Distributor
  • IRFR3103TR Price
  • IRFR3103TR Distributor

IRFR3103TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds170pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

BUK7631-100E,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

31mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

29.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1738pF @ 25V

FET Feature

-

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HUF75631S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

79nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1220pF @ 25V

FET Feature

-

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STP11N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

644pF @ 100V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

NVMFS6H800NWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

28A (Ta), 203A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 330µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5530pF @ 40V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

FQA8N80C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.55Ohm @ 4.2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 25V

FET Feature

-

Power Dissipation (Max)

220W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

Recently Sold

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

STM32L433CCU6

STM32L433CCU6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 48QFPN

PIC16F1705-I/P

PIC16F1705-I/P

Microchip Technology

IC MCU 8BIT 14KB FLASH 14DIP

DS1225AD-150IND

DS1225AD-150IND

Maxim Integrated

IC NVSRAM 64K PARALLEL 28EDIP

LTC4417IUF#TRPBF

LTC4417IUF#TRPBF

Linear Technology/Analog Devices

IC OR CTRLR SRC SELECT 24QFN

SISS27DN-T1-GE3

SISS27DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 50A PPAK 1212-8S

SP0502BAHTG

SP0502BAHTG

Littelfuse

TVS DIODE 5.5V 8.5V SOT23-3

EP4CE6E22C8N

EP4CE6E22C8N

Intel

IC FPGA 91 I/O 144EQFP

7447709330

7447709330

Wurth Electronics

FIXED IND 33UH 4.2A 45 MOHM SMD

EPM7064STC44-10N

EPM7064STC44-10N

Intel

IC CPLD 64MC 10NS 44TQFP

4N32SM

4N32SM

ON Semiconductor

OPTOISO 4.17KV DARL W/BASE 6SMD

SMAJ30CA

SMAJ30CA

Bourns

TVS DIODE 30V 48.4V SMA