Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR3910TRL

IRFR3910TRL

For Reference Only

Part Number IRFR3910TRL
PNEDA Part # IRFR3910TRL
Description MOSFET N-CH 100V 16A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR3910TRL Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR3910TRL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR3910TRL, IRFR3910TRL Datasheet (Total Pages: 11, Size: 147.14 KB)
PDFIRFR3910TRR Datasheet Cover
IRFR3910TRR Datasheet Page 2 IRFR3910TRR Datasheet Page 3 IRFR3910TRR Datasheet Page 4 IRFR3910TRR Datasheet Page 5 IRFR3910TRR Datasheet Page 6 IRFR3910TRR Datasheet Page 7 IRFR3910TRR Datasheet Page 8 IRFR3910TRR Datasheet Page 9 IRFR3910TRR Datasheet Page 10 IRFR3910TRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR3910TRL Datasheet
  • where to find IRFR3910TRL
  • Infineon Technologies

  • Infineon Technologies IRFR3910TRL
  • IRFR3910TRL PDF Datasheet
  • IRFR3910TRL Stock

  • IRFR3910TRL Pinout
  • Datasheet IRFR3910TRL
  • IRFR3910TRL Supplier

  • Infineon Technologies Distributor
  • IRFR3910TRL Price
  • IRFR3910TRL Distributor

IRFR3910TRL Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs115mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds640pF @ 25V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

HAT2168HWS-E

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1730pF @ 10V

FET Feature

-

Power Dissipation (Max)

15W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

5-LFPAK

Package / Case

SC-100, SOT-669

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

36.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2020pF @ 25V

FET Feature

-

Power Dissipation (Max)

157W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTH027N65S3F_F155

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FRFET®, SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27.4mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

5V @ 7.5mA

Gate Charge (Qg) (Max) @ Vgs

259nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7690pF @ 400V

FET Feature

-

Power Dissipation (Max)

595W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

TSM80N950CI C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

691pF @ 100V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220AB

Package / Case

TO-220-3 Full Pack, Isolated Tab

FDC3612_F095

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

125mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6

Recently Sold

ISL9205IRZ-T

ISL9205IRZ-T

Renesas Electronics America Inc.

IC CHRGR LI-ION SGL 4.2V 16-QFN

HEDS-5500#F04

HEDS-5500#F04

Broadcom

ROTARY ENCODER OPTICAL 256PPR

1SMB28AT3G

1SMB28AT3G

Littelfuse

TVS DIODE 28V 45.4V SMB

T520V337M2R5ATE025

T520V337M2R5ATE025

KEMET

CAP TANT POLY 330UF 2.5V 2917

1N4148WS

1N4148WS

ON Semiconductor

DIODE GEN PURP 75V 150MA SOD323F

AS1360-33-T

AS1360-33-T

ams

IC REG LINEAR 3.3V 150MA SOT23-3

AD7689BCBZ-RL7

AD7689BCBZ-RL7

Analog Devices

IC ADC 16BIT SAR 20WLCSP

PEX8796-AB80BI G

PEX8796-AB80BI G

Broadcom

PCI INT IC MULT-RT GEN 3 SW

S202T01

S202T01

Sharp Microelectronics

SSR RELAY SPST-NO 2A 80-240V

MAX811SEUS+T

MAX811SEUS+T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

ADM6820ARJZ-REEL7

ADM6820ARJZ-REEL7

Analog Devices

IC POWER SEQUENCER SOT23-6

SRP5030T-4R7M

SRP5030T-4R7M

Bourns

FIXED IND 4.7UH 4.6A 53 MOHM SMD