Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR5410TRR

IRFR5410TRR

For Reference Only

Part Number IRFR5410TRR
PNEDA Part # IRFR5410TRR
Description MOSFET P-CH 100V 13A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR5410TRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFR5410TRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR5410TRR, IRFR5410TRR Datasheet (Total Pages: 11, Size: 218.3 KB)
PDFIRFR5410TRR Datasheet Cover
IRFR5410TRR Datasheet Page 2 IRFR5410TRR Datasheet Page 3 IRFR5410TRR Datasheet Page 4 IRFR5410TRR Datasheet Page 5 IRFR5410TRR Datasheet Page 6 IRFR5410TRR Datasheet Page 7 IRFR5410TRR Datasheet Page 8 IRFR5410TRR Datasheet Page 9 IRFR5410TRR Datasheet Page 10 IRFR5410TRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR5410TRR Datasheet
  • where to find IRFR5410TRR
  • Infineon Technologies

  • Infineon Technologies IRFR5410TRR
  • IRFR5410TRR PDF Datasheet
  • IRFR5410TRR Stock

  • IRFR5410TRR Pinout
  • Datasheet IRFR5410TRR
  • IRFR5410TRR Supplier

  • Infineon Technologies Distributor
  • IRFR5410TRR Price
  • IRFR5410TRR Distributor

IRFR5410TRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs58nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 25V
FET Feature-
Power Dissipation (Max)66W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRFR220NCPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Power Dissipation (Max)

43W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1.1mA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1520pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FDMS86101DC

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Dual Cool™, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

14.5A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3135pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Dual Cool™56

Package / Case

8-PowerTDFN

SUM90142E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

ThunderFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3120pF @ 100V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPP16N50C3HKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

560V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.9V @ 675µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

SRP5030T-4R7M

SRP5030T-4R7M

Bourns

FIXED IND 4.7UH 4.6A 53 MOHM SMD

CJS-1201TB1

CJS-1201TB1

Nidec Copal Electronics

SWITCH SLIDE SPDT 100MA 6V

SI7114DN-T1-E3

SI7114DN-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 11.7A 1212-8

ADM6820ARJZ-REEL7

ADM6820ARJZ-REEL7

Analog Devices

IC POWER SEQUENCER SOT23-6

GP10J-E3/54

GP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

ISL9205IRZ-T

ISL9205IRZ-T

Renesas Electronics America Inc.

IC CHRGR LI-ION SGL 4.2V 16-QFN

PIC18F1220-I/SO

PIC18F1220-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

T520D337M006ATE015

T520D337M006ATE015

KEMET

CAP TANT POLY 330UF 6.3V 2917

AT89S52-24AUR

AT89S52-24AUR

Microchip Technology

IC MCU 8BIT 8KB FLASH 44TQFP

ISL6269BCRZ

ISL6269BCRZ

Renesas Electronics America Inc.

IC REG CTRLR BUCK 16QFN

ATMEGA32U4-MUR

ATMEGA32U4-MUR

Microchip Technology

IC MCU 8BIT 32KB FLASH 44VQFN

W25Q256JVFIQ

W25Q256JVFIQ

Winbond Electronics

IC FLASH 256M SPI 133MHZ 16SOIC