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IRFU12N25D

IRFU12N25D

For Reference Only

Part Number IRFU12N25D
PNEDA Part # IRFU12N25D
Description MOSFET N-CH 250V 14A I-PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,740
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFU12N25D Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFU12N25D
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFU12N25D, IRFU12N25D Datasheet (Total Pages: 11, Size: 109.52 KB)
PDFIRFU12N25D Datasheet Cover
IRFU12N25D Datasheet Page 2 IRFU12N25D Datasheet Page 3 IRFU12N25D Datasheet Page 4 IRFU12N25D Datasheet Page 5 IRFU12N25D Datasheet Page 6 IRFU12N25D Datasheet Page 7 IRFU12N25D Datasheet Page 8 IRFU12N25D Datasheet Page 9 IRFU12N25D Datasheet Page 10 IRFU12N25D Datasheet Page 11

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IRFU12N25D Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs260mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds810pF @ 25V
FET Feature-
Power Dissipation (Max)144W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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