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IRG7CH42UED

IRG7CH42UED

For Reference Only

Part Number IRG7CH42UED
PNEDA Part # IRG7CH42UED
Description IGBT 1200V ULTRA FAST DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,888
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH42UED Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH42UED
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG7CH42UED Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

220A

Current - Collector Pulsed (Icm)

480A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 70A

Power - Max

830W

Switching Energy

1.9mJ (on), 2mJ (off)

Input Type

Standard

Gate Charge

143nC

Td (on/off) @ 25°C

30ns/120ns

Test Condition

360V, 70A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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IRG4RC20FTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

22A

Current - Collector Pulsed (Icm)

44A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power - Max

66W

Switching Energy

190µJ (on), 920µJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

26ns/194ns

Test Condition

480V, 12A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

IRG4BC20F

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

64A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 9A

Power - Max

60W

Switching Energy

70µJ (on), 600µJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

24ns/190ns

Test Condition

480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

55A

Current - Collector Pulsed (Icm)

110A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 55A

Power - Max

200W

Switching Energy

1.5mJ (off)

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

30ns/150ns

Test Condition

480V, 30A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

175A

Current - Collector Pulsed (Icm)

1000A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 100A

Power - Max

520W

Switching Energy

2.85mJ (on), 2.9mJ (off)

Input Type

Standard

Gate Charge

315nC

Td (on/off) @ 25°C

48ns/160ns

Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

24-PowerSMD, 21 Leads

Supplier Device Package

24-SMPD

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