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IRG7CH44K10EF

IRG7CH44K10EF

For Reference Only

Part Number IRG7CH44K10EF
PNEDA Part # IRG7CH44K10EF
Description IGBT CHIP WAFER
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,966
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH44K10EF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH44K10EF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG7CH44K10EF, IRG7CH44K10EF Datasheet (Total Pages: 4, Size: 195.85 KB)
PDFIRG7CH44K10EF Datasheet Cover
IRG7CH44K10EF Datasheet Page 2 IRG7CH44K10EF Datasheet Page 3 IRG7CH44K10EF Datasheet Page 4

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IRG7CH44K10EF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)25A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 25A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge160nC
Td (on/off) @ 25°C60ns/230ns
Test Condition600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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-55°C ~ 150°C (TJ)

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

3.2mJ (on), 1.7mJ (off)

Input Type

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Gate Charge

210nC

Td (on/off) @ 25°C

80ns/200ns

Test Condition

400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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