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IRG7CH81K10EF-R

IRG7CH81K10EF-R

For Reference Only

Part Number IRG7CH81K10EF-R
PNEDA Part # IRG7CH81K10EF-R
Description IGBT 1200V ULTRA FAST DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7CH81K10EF-R Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7CH81K10EF-R
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG7CH81K10EF-R, IRG7CH81K10EF-R Datasheet (Total Pages: 4, Size: 202.9 KB)
PDFIRG7CH81K10EF-R Datasheet Cover
IRG7CH81K10EF-R Datasheet Page 2 IRG7CH81K10EF-R Datasheet Page 3 IRG7CH81K10EF-R Datasheet Page 4

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IRG7CH81K10EF-R Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 150A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge745nC
Td (on/off) @ 25°C70ns/330ns
Test Condition600V, 150A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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Supplier Device Package

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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