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IRGB5B120KDPBF

IRGB5B120KDPBF

For Reference Only

Part Number IRGB5B120KDPBF
PNEDA Part # IRGB5B120KDPBF
Description IGBT 1200V 12A 89W TO220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,698
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGB5B120KDPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGB5B120KDPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGB5B120KDPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)12A
Current - Collector Pulsed (Icm)24A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 6A
Power - Max89W
Switching Energy390µJ (on), 330µJ (off)
Input TypeStandard
Gate Charge25nC
Td (on/off) @ 25°C22ns/100ns
Test Condition600V, 6A, 50Ohm, 15V
Reverse Recovery Time (trr)160ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 15A

Power - Max

180W

Switching Energy

800µJ (on), 900µJ (off)

Input Type

Standard

Gate Charge

135nC

Td (on/off) @ 25°C

20ns/170ns

Test Condition

600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

59A

Current - Collector Pulsed (Icm)

72A

Vce(on) (Max) @ Vge, Ic

1.77V @ 15V, 24A

Power - Max

246W

Switching Energy

532µJ (on), 311µJ (off)

Input Type

Standard

Gate Charge

77nC

Td (on/off) @ 25°C

19ns/90ns

Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

102ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

TO-262

STGB15M65DF2

STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 15A

Power - Max

136W

Switching Energy

90µJ (on), 450µJ (off)

Input Type

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Gate Charge

45nC

Td (on/off) @ 25°C

24ns/93ns

Test Condition

400V, 15A, 12Ohm, 15V

Reverse Recovery Time (trr)

142ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

2500V

Current - Collector (Ic) (Max)

29A

Current - Collector Pulsed (Icm)

70A

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 8A

Power - Max

280W

Switching Energy

2.6mJ (on), 1.07mJ (off)

Input Type

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Gate Charge

45nC

Td (on/off) @ 25°C

11ns/180ns

Test Condition

1250V, 8A, 15Ohm, 15V

Reverse Recovery Time (trr)

5ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

APT70GR120L

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

160A

Current - Collector Pulsed (Icm)

280A

Vce(on) (Max) @ Vge, Ic

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Power - Max

961W

Switching Energy

3.82mJ (on), 2.58mJ (off)

Input Type

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Gate Charge

544nC

Td (on/off) @ 25°C

33ns/278ns

Test Condition

600V, 70A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264

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