IRGC4060B
For Reference Only
| Part Number | IRGC4060B |
| PNEDA Part # | IRGC4060B |
| Description | IGBT CHIP WAFER |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,786 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRGC4060B Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRGC4060B |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- Orders cannot be canceled after shipping the packages.
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IRGC4060B Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 8A |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | - |
| Power - Max | - |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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Manufacturer STMicroelectronics Series Automotive, AEC-Q101 IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 18A Current - Collector Pulsed (Icm) 30A Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 5A Power - Max 62.5W Switching Energy 45µJ (on), 105µJ (off) Input Type Standard Gate Charge 23nC Td (on/off) @ 25°C 9.5ns/87ns Test Condition 400V, 5A, 10Ohm, 15V Reverse Recovery Time (trr) 50ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |
Manufacturer Microsemi Corporation Series POWER MOS 7® IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 40A Power - Max 543W Switching Energy 825µJ (off) Input Type Standard Gate Charge 145nC Td (on/off) @ 25°C 16ns/75ns Test Condition 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
Manufacturer Infineon Technologies Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 59A Current - Collector Pulsed (Icm) 72A Vce(on) (Max) @ Vge, Ic 1.77V @ 15V, 24A Power - Max 246W Switching Energy 532µJ (on), 311µJ (off) Input Type Standard Gate Charge 77nC Td (on/off) @ 25°C 19ns/90ns Test Condition 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr) 102ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D²PAK |
