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IRL530NSTRR

IRL530NSTRR

For Reference Only

Part Number IRL530NSTRR
PNEDA Part # IRL530NSTRR
Description MOSFET N-CH 100V 17A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL530NSTRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL530NSTRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL530NSTRR, IRL530NSTRR Datasheet (Total Pages: 11, Size: 284.82 KB)
PDFIRL530NSTRR Datasheet Cover
IRL530NSTRR Datasheet Page 2 IRL530NSTRR Datasheet Page 3 IRL530NSTRR Datasheet Page 4 IRL530NSTRR Datasheet Page 5 IRL530NSTRR Datasheet Page 6 IRL530NSTRR Datasheet Page 7 IRL530NSTRR Datasheet Page 8 IRL530NSTRR Datasheet Page 9 IRL530NSTRR Datasheet Page 10 IRL530NSTRR Datasheet Page 11

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IRL530NSTRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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