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IRL630STRRPBF

IRL630STRRPBF

For Reference Only

Part Number IRL630STRRPBF
PNEDA Part # IRL630STRRPBF
Description MOSFET N-CH 200V 9A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,780
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL630STRRPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRL630STRRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRL630STRRPBF, IRL630STRRPBF Datasheet (Total Pages: 10, Size: 243.5 KB)
PDFSIHL630STRL-GE3 Datasheet Cover
SIHL630STRL-GE3 Datasheet Page 2 SIHL630STRL-GE3 Datasheet Page 3 SIHL630STRL-GE3 Datasheet Page 4 SIHL630STRL-GE3 Datasheet Page 5 SIHL630STRL-GE3 Datasheet Page 6 SIHL630STRL-GE3 Datasheet Page 7 SIHL630STRL-GE3 Datasheet Page 8 SIHL630STRL-GE3 Datasheet Page 9 SIHL630STRL-GE3 Datasheet Page 10

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IRL630STRRPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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